Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance–Voltage Measurement

Imaging "invisible" dopant atoms in semiconductor nanocrystals.

Nanometer-scale semiconductors that contain a few intentionally added impurity atoms can provide new opportunities for controlling electronic properties. However, since the physics of these materials depends strongly on the exact arrangement of the impurities, or dopants, inside the structure, and many impurities of interest cannot be observed with currently available imaging techniques, new me...

Single Dopant Diffusion in Semiconductor Technology

Direct measurement of dopant distribution in an individual vapour-liquid-solid nanowire.

Semiconductor nanowires show promise for many device applications, but controlled doping with electronic and magnetic impurities remains an important challenge. Limitations on dopant incorporation have been identified in nanocrystals, raising concerns about the prospects for doping nanostructures. Progress has been hindered by the lack of a method to quantify the dopant distribution in single n...

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, whi...

Inhomogeneous boundary effects in semiconductor quantum wires

Abslract Boundary effects play an essential role in determining the physical properties of semiconductor quantum wires. Additional features come into play when one considers inhomogeneous boundaries, i.e. wires whose widths are functions of distance along the length of the wire. We show that, in the adiabatic approximation (which assumes that the boundary patential fluctuation effects, or equiv...